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DISCRETE SEMICONDUCTORS
DATA SHEET
BST72A N-channel vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use in telephone ringer circuits and for application with relay, high-speed and line-transformer drivers. FEATURES * Direct interface to C-MOS, TTL, etc. * High-speed switching * No second breakdown QUICK REFERENCE DATA Drain-source voltage Drain-source voltage (non-repetitive peak; tp 2 ms) Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 C Drain-source ON-resistance ID = 150 mA; VGS = 5 V Transfer admittance ID = 200 mA; VDS = 5 V PINNING - TO-92 VARIANT 1 = source 2 = gate 3 = drain PIN CONFIGURATION Yfs typ. RDS(on) typ. max. VDS VDS(SM) VGSO ID Ptot max. max. max. max. max.
BST72A
80 V 100 V 20 V 300 mA 0.83 W
7 10
150 mS
handbook, halfpage
d
1 2 3 g
MAM146
s
Note: Various pinout configurations available.
Fig.1 Simplified outline and symbol.
April 1995
2
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Drain-source voltage (non-repetitive peak; tp 2 ms) Gate-source voltage (open drain) Drain current (DC) Drain current (peak) Total power dissipation up to Tamb = 25 C (note 1) Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient (note 1) Note 1. Transistor mounted on printed circuit board, max. lead length 4 mm. Rth j-a = VDS VDS(SM) VGSO ID IDM Ptot Tstg Tj max. max. max. max. max. max. max.
BST72A
80 V 100 V 20 V 300 mA 600 mA 0.83 W 150 C
-65 to + 150 C
150 K/W
April 1995
3
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified Drain-source breakdown voltage ID = 10 A; VGS = 0 Drain-source leakage current VDS = 60 V; VGS = 0 Gate-source leakage current VGS = 20 V; VDS = 0 Gate threshold voltage ID = 1 mA; VDS = VGS Drain-source ON-resistance (see Fig.4) ID = 150 mA; VGS = 5 V Transfer admittance ID = 200 mA; VDS = 5 V Input capacitance at f = 1 MHz VDS = 10 V; VGS = 0 Output capacitance at f = 1 MHz VDS = 10 V; VGS = 0 Feedback capacitance at f = 1 MHz VDS = 10 V; VGS = 0 Switching times (see Figs 2 and 3) ID = 200 mA; VDS = 50 V; VGS = 0 to 10 V ton typ. max. typ. max. Crss typ. max. Coss typ. max. Ciss typ. max. Yfs typ. RDS(on) typ. max. VGS(th) min. max. IGSS max. IDSS max. V(BR)DS min.
BST72A
80 V 1.0 A 100 nA 1.5 V 3.5 V 7 10
150 mS 15 pF 30 pF
13 pF 20 pF
3 pF 6 pF
4 ns 10 ns 4 ns 10 ns
toff
April 1995
4
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
BST72A
handbook, halfpage
VDD = 50 V
handbook, halfpage
90 %
INPUT 10 %
10 V 0V ID 50
MSA631
90 % OUTPUT 10 % ton toff
MBB692
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
103 handbook, halfpage ID (mA)
MDA762
VGS = 10 V
8V 6V 5V
handbook, halfpage
1
MDA732
ID (A)
VDS = 10 V 5V
0.8
0.6 102 0.4
0.2
10
0 0 2 4 6 8 10 RDSon () 0 2 4 6 8 10 VGS (V)
Fig.4 Tj = 25 C; typical values.
Fig.5 Tj = 25 C; typical values.
April 1995
5
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
BST72A
handbook, halfpage
1
MDA763
ID (A) 0.8
VGS = 10 V
9V 8V
handbook,
1
MDA690
Ptot (W) 0.8
7V 0.6 6V 0.4 5V 0.2 0.2 0.4 0.6
4V 3V
0 0 2 4 6 8 10 VDS (V)
0 0 50 100 150 200 Tamb (C)
Fig.6 Tj = 25 C; typical values.
Fig.7 Power derating curve.
handbook, halfpage
3
MDA735
handbook, halfpage
1.2 k
MDA736
k 2.5
1.1
2
1
1.5
0.9
1
0.8
0.5 -50
0
50
100
Tj (C)
150
0.7 -50
0
50
100
Tj (C)
150
Fig.8 R DS on at T j k = ----------------------------------------- ; R DS on at 25 C typ. values at 150 mA/5 V.
Fig.9 V GS ( th ) at T j k = -------------------------------------------- ; V GS ( th ) at 25 C VGS(th) at 1 mA; typical values.
April 1995
6
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
BST72A
handbook, halfpage
50
MDA737
C (pF) 40
30
20 Ciss 10 Coss Crss 0 0 10 20 VDS (V) 30
Fig.10 Tj = 25 C; VGS = 0; f = 1 MHz; typical values.
April 1995
7
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
PACKAGE OUTLINES Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
BST72A
SOT54 variant
c
L2
E d A L b
1 2
D e1 e
3
b1
L1
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm Notes 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 variant REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-04-14 A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) max 2.5 L2 max 2.5
April 1995
8
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS
BST72A
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
April 1995
9
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
NOTES
BST72A
April 1995
10
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
NOTES
BST72A
April 1995
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
137107/00/01/pp12
Date of release: April 1995
Document order number:
9397 750 02497

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